DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2414, 2SK2414-Z
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTIO...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK2414, 2SK2414-Z
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2414 is N-Channel MOS Field Effect
Transistor designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeter)
6.5 ±0.2
FEATURES
1.6 ±0.2
5.0 ±0.2 4
1.5 –0.1
+0.2
2.3 ±0.2 0.5 ±0.1
RDS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 5.0 A) RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)
1
2 3
Low Ciss Ciss = 840 pF TYP. Built-in G-S Gate Protection Diodes High Avalanche Capability Ratings
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
1.3 MAX.
7.0 MIN. 5.5 ±0.2 13.7 MIN.
Low On-Resistance
0.6 ±0.1 2.3 2.3
0.6 ±0.1
1. 2. 3. 4.
Gate Drain Source Fin (Drain)
MP-3
1.5 –0.1
+0.2
0.75
6.5 ±0.2
5.0 ±0.2
2.3 ±0.2 0.5 ±0.1
0.8 4.3 MAX.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 60 ±20 ±10 ±40 20 1.0 150 10 10 V V A A W W °C A mJ
12.0
1.3 MAX.
0.9 0.8 2.3 2.3 MAX. MAX. 0.8
MIN.
1. 2. 3. 4.
Gate Drain Sourc...