2SK2413

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2413 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2413 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. PACKAGE DIMENSIONS (in millimeter) FEATURES Low On-Resistance RDS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 5.0 A) RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A) 8.0 ±0.2 4.5 ±0.2 Low Ciss Ciss = 860 pF TYP. Built-in G-S Gate Protection Diodes High Avalanche Capability Ratings QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. 13.0 ±0.2 1 2 3 2.5 ±0.2 1.4 ±0.2 1.4 ±0.2 0.5 ±0.1 0.5 ±0.1 0.5 ±0.1 1. Gate 2. Drain 3. Source ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID(DC) ID(pulse) Tch Tstg IAS EAS 60 ± 20 ± 10 ± 40 1.8 150 10 10 V V A A W ˚C A mJ Gate Protection Diode Source Gate Body Diode Drain MP-10 (ISOLATED TO-220) Total Power Dissipation (TA = 25 ˚C) PT –55 to +150 ˚C ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 The information in this document is subject to change without notice. Document No. TC-2494 (O. D. No. TC-8032) Date Published Nove...