N-channel Silicon MOSFET
Ordering number : ENN5412B
2SK2378
N-channel Silicon MOSFET
2SK2378
Ultrahigh-Speed Switching Applications
Features
• ...
Description
Ordering number : ENN5412B
2SK2378
N-channel Silicon MOSFET
2SK2378
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
unit : mm 2063A
[2SK2378]
10.0 3.2 4.5 2.8
Low ON-resistance. Ultrahigh-speed switching. Low-voltage drive. Micaless package facilitaing mounting.
3.5 7.2 16.0
18.1
14.0
1.6 1.2 0.75
5.6
2.4 0.7
2.55
1 2 3 2.55
2.4
1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML
Ratings 200 ± 20 13 Unit V V A A W W °C
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C
2.55
2.55
Conditions
52 2.0 30 150 -55 to +150 °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) yfs Conditions ID=1mA, VGS=0 IG=± 100µA, VDS=0 VDS=200V, VGS=0 VGS=± 16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=7A 1.5 5 8.5 Ratings min 200 ± 20 100 ± 10 2.5 typ max Unit V V µA µA V S
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or ot...
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