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2SK2367 Dataheets PDF



Part Number 2SK2367
Manufacturers NEC
Logo NEC
Description N-Channel MOSFET
Datasheet 2SK2367 Datasheet2SK2367 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2367/2SK2368 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) 1.0 15.7 MAX. 4 3.2±0.2 4.7 MAX. 1.5 FEATURES 2SK2368: RDS (on) = 0.6 Ω (VGS = 10 V, ID = 8.0 A) ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage (2SK2367/2SK2368) Gate to Source Voltage Drain Current (DC) Drain Curren.

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DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2367/2SK2368 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) 1.0 15.7 MAX. 4 3.2±0.2 4.7 MAX. 1.5 FEATURES 2SK2368: RDS (on) = 0.6 Ω (VGS = 10 V, ID = 8.0 A) ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage (2SK2367/2SK2368) Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID (DC) ID (pulse) PT1 PT2 Tch Tstg IAS EAS 450/500 ± 30 ± 15 ± 60 120 3.0 150 15 161 V V A A W W ˚C A mJ 19 MIN. 3.0±0.2 • Low Ciss Ciss = 1 600 pF TYP. • High Avalanche Capability Ratings 1 2 3 2.2±0.2 5.45 1.0±0.2 5.45 4.5±0.2 2SK2367: RDS (on) = 0.5 Ω (VGS = 10 V, ID = 8.0 A) 20.0±0.2 6.0 0.6±0.1 2.8±0.1 1. Gate 2. Drain 3. Source 4. Fin (Drain) MP-88 Drain –55 to +150 ˚C Body Diode Gate ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 Source Document No. TC-2506 (O. D. No. TC-8065) Date Published December 1994 P Printed in Japan © 7.0 • Low On-Resistance 1995 1994 2SK2367/2SK2368 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Drain to Source On-Resistance SYMBOL RDS (on) MIN. TYP. 0.4 0.5 Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS (off) | yfs | IDSS IGSS Ciss Coss Crss td (on) tr td (off) tf QG QGS QGD VF (S-D) trr Qrr 1 600 300 30 30 40 70 25 43 10 20 1.0 400 1.8 2.5 5.0 100 ± 100 MAX. 0.5 0.6 3.5 V S UNIT Ω TEST CONDITIONS VGS = 10 V ID = 8.0 A 2SK2367 2SK2368 VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 8.0 A VDS = VDSS, VGS = 0 VGS = ± 30 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 8.0 A VGS = 10 V VDD = 150 V RG = 10 Ω RL = 18.8 Ω ID = 15 A VDD = 400 V VGS = 10 V IF = 15 A, VGS = 0 IF = 15 A, VGS = 0 di/dt = 50 A/µs µA nA pF pF pF ns ns ns ns nC nC nC V ns µC Test Circuit 1 Avalanche Capability D.U.T. RG = 25 Ω PG. VGS = 20 - 0 V 50 Ω Test Circuit 2 Switching Time D.U.T. L VDD PG. RG RG = 10 Ω RL VGS Wave Form VGS 0 10 % VGS (on) 90 % VDD ID 90 % 90 % ID D Wave Form BVDSS IAS ID VDD VDS VGS 0 t t = 1 us Duty Cycle ≤ 1 % I 0 10 % td (on) ton tr td (off) toff 10 % tf Starting Tch Test Circuit 3 Gate Charge D.U.T. IG = 2 mA PG. 50 Ω RL VDD The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 2SK2367/2SK2368 TYPICAL CHARACTERISTICS (TA = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 100 80 60 40 20 80 60 40 20 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 100 d ite im 0 V) L ) on =1 S( RD VGS t (a ID (DC) Po TC - Case Temperature - ˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 24 Pulsed VGS = 20 V 10 V 8V 6V ID (pulse) PW 10 0 = s 10 20 ID - Drain Current - A ID - Drain Current - A s µ 10 1 µ m s 16 12 8 4 w er 10 m Di s ss ipa 1.0 tio n 2SK2368 Lim ite 2SK2367 d 0.1 1 TC = 25 ˚C Single Pulse 10 100 1 000 0 4 8 12 16 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V 100 Pulsed ID - Drain Current - A 10 TA = –25 ˚C 25 ˚C 75 ˚C 125 ˚C 1 0.1 0 5 10 15 VGS - Gate to Source Voltage - V 3 2SK2367/2SK2368 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth (ch-c) (t) - Transient Thermal Resistance - C/W 1 000 100 10 Rth (ch-c) = 1.04 ˚C/W 1 0.1 0.01 TC = 25 ˚C Single Pulse 0.001 10 u 100 u 1m 10 m 100 m 1 10 100 1 000 Rth (ch-a) = 41.7 ˚C/W PW - Pulse Width - s FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 100 TA = –25 ˚C 25 ˚C 75 ˚C 125 ˚C VDS = 10 V Pulsed RDS (on) - Drain to Source On-State Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1.5 Pulsed 10 1.0 ID = 10 A 5A 2.5 A 0.5 1.0 0.1 1.0 10 100 0 10 20 30 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed VGS (off) - Gate to Source Cutoff Voltage - V VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE 4.0 RDS (on) - Drain to Source On-State Resistance - Ω 2.0 3.0 1.0 2.0 1.0 0 1.0 10 ID - Drain Current - A 100 0 –50 0 50 100 150 Tch - Channel Temperature - ˚C 4 2SK2367/2SK2368 RDS (on) - Drain to Source On-State Re.


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