2SK2364

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2363/2SK2364 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2363/2SK2364 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) FEATURES 10.0±0.3 Low On-Resistance 2SK2363: RDS (on) = 0.5 Ω (VGS = 10 V, ID = 4.0 A) 2SK2364: RDS (on) = 0.6 Ω (VGS = 10 V, ID = 4.0 A) 3.2±0.2 4.5±0.2 2.7±0.2 Drain to Source Voltage (2SK2363/2SK2364) Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 450/500 ± 30 ± 8.0 ± 32 35 2.0 150 8.0 320 V V A A W W ˚C A mJ 1 2 3 0.7±0.1 2.54 1.3±0.2 1.5±0.2 2.54 13.5MIN. ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) 4±0.2 12.0±0.2 Low Ciss Ciss = 1600 pF TYP. High Avalanche Capability Ratings Isolate TO-220 Package 15.0±0.3 3±0.1 2.5±0.1 0.65±0.1 1. Gate 2. Drain 3. Source –55 to +150 ˚C MP-45F (ISOLATED TO-220) Drain ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 Body Diode Gate Source Document No. TC-2504A (O. D. No. TC-8063A) Date Published May 1995 P Printed in Japan © 1994 2SK2363/2SK2364 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Drain to Source On-Resistance SYMBOL RDS (on) MIN. TYP. 0.4 0.5 Gate to Source Cutoff V...