DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z
SWITCHING N-CHANNEL POWER MOS FET INDUSTR...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel MOS Field Effect
Transistor designed for high voltage switching applications.
3.0 ±0.3
PACKAGE DIMENSIONS
(in millimeter)
10.6 MAX. 3.6 ±0.2 10.0 4.8 MAX. 1.3 ±0.2
5.9 MIN.
1 2 3
Low On-Resistance
2SK2355: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A) 2SK2356: RDS(on) = 1.5 Ω (VGS = 10 V, ID = 2.5 A)
4
12.7 MIN. 15.5 MAX.
FEATURES
6.0 MAX.
Low Ciss Ciss = 670 pF TYP. High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2355/2356) Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (Ta = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 450/500 ±30 ± 5.0 ±20 50 1.5 150 5.0 17.4 V V A A W
1.3 ±0.2 0.75 ±0.1 2.54
0.5 ±0.2 2.8 ±0.2
2.54
1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB
MP-25 (TO-220)
(10.0) 4.8 MAX. 1.3 ±0.2
1.5 MAX.
4
°C A mJ
–55 to +150 °C
1.0 ±0.5
W
1.4 ±0.2
1.0 ±0.3 (2.54) (2.54) 1 2 3
8.5 ±0.2
R) .5 R) (0 0.8 (
1.1 ±0.2 3.0 ±0.5
0.5 ±0.2
MP-25Z (TO-220 SURFACE MOUNT TYPE)
Drain
2.8 ±0.2
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
1. 2. 3. 4.
Gate Drain Source Fin (Drain)
B...