2SK2355-Z

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. 3.0 ±0.3 PACKAGE DIMENSIONS (in millimeter) 10.6 MAX. 3.6 ±0.2 10.0 4.8 MAX. 1.3 ±0.2 5.9 MIN. 1 2 3 Low On-Resistance 2SK2355: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A) 2SK2356: RDS(on) = 1.5 Ω (VGS = 10 V, ID = 2.5 A) 4 12.7 MIN. 15.5 MAX. FEATURES 6.0 MAX. Low Ciss Ciss = 670 pF TYP. High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage (2SK2355/2356) Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (Ta = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 450/500 ±30 ± 5.0 ±20 50 1.5 150 5.0 17.4 V V A A W 1.3 ±0.2 0.75 ±0.1 2.54 0.5 ±0.2 2.8 ±0.2 2.54 1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB MP-25 (TO-220) (10.0) 4.8 MAX. 1.3 ±0.2 1.5 MAX. 4 °C A mJ –55 to +150 °C 1.0 ±0.5 W 1.4 ±0.2 1.0 ±0.3 (2.54) (2.54) 1 2 3 8.5 ±0.2 R) .5 R) (0 0.8 ( 1.1 ±0.2 3.0 ±0.5 0.5 ±0.2 MP-25Z (TO-220 SURFACE MOUNT TYPE) Drain 2.8 ±0.2 ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 1. 2. 3. 4. Gate Drain Source Fin (Drain) B...