2SK2348

Ordering number : EN5415A N-Channel Silicon MOSFET 2SK2348 High-Voltage, High-Speed Switching Applications Features Low ON resistance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Package Dimensions unit: mm 2131-TO-3JML [2SK2348] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions 1 : Gate 2 : Drain 3 : Source SANYO: TO-3JML PW≤10µs, duty cycle≤1% Tc=25°C Ratings 1200 ±30 14 28 4.6 160 150 –55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter D-S Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to Source Leak Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss Conditions ID=1mA, VGS=0 VDS=1200V, VGS=0 VGS=±30V, VDS=0 VDS=10V, ID=1mA VDS=20V, ID=7A ID=7A, VGS=10V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz Ratings min 1200 typ max 1.0 ±100 3.5 6.0 1.0 3000 500 250 1.5 Unit V mA nA V S Ω pF pF pF 1.5 3.0 Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 72597TS (KOTO) TA-1033 No.5415-1/4 2SK2348 Continued from p...