Silicon N-Channel Power MOSFET
Power F-MOS FETs
2SK2340
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-spe...
Description
Power F-MOS FETs
2SK2340
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown
unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2
s Applications
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
15.0±0.3
4.1±0.2 8.0±0.2 Solder Dip
3.0±0.2
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 900 ±30 ±5 ±10 45 50 2 150 −55 to +150 Unit V
13.7–0.2
+0.5
1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 1 2 3
2.6±0.1 0.7±0.1
7
V A A mJ W °C °C
1: Gate 2: Drain 3: Source TO-220E Package
Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature
*
TC = 25°C Ta = 25°C
L = 3.6mH, IL = 5A, 1 pulse
s Electrical Characteristics (TC = 25°C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr tf td(off) Rth(ch-c) Rth(ch-a) VDD = 200V, ID = 3A VGS = 10V, RL = 66.6Ω Conditions VDS = 720V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 3A VDS = 25V, ID = 3A IDR = 5A, VGS = 0 1400 VDS = 20V, VGS = 0, f = 1MHz 1...
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