Power F-MOS FETs
2SK2339
2SK2339
Silicon N-Channel Power F-MOS
s Features
q Avalanche q Low q No Unit : mm
8.5±0.2 6.0...
Power F-MOS FETs
2SK2339
2SK2339
Silicon N-Channel Power F-MOS
s Features
q Avalanche q Low q No Unit : mm
8.5±0.2 6.0±0.5 3.4±0.3 1.0±0.1
energy capability guaranteed
ON-resistance
10.0±0.3
secondary breakdown drive
1.5±0.1
q Low-voltage
s Applications
10.5min.
1.5max.
2.0
1.1max.
q Non-contact q Solenoid q Motor
relay
drive
0.8±0.1
0.5max.
drive equipment mode
regulator
2.54±0.3 5.08±0.5 1 2 3
q Control
q Switching
s Absolute Maximum Ratings (Tc = 25˚C)
Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current DC Pulse TC = 25˚C Ta= 25˚C Symbol VDSS VGSS ID IDP EAS * PD Tch Tstg Rating 80±10 ±15 ±10 ±20 62.5 30 1.3 150 –55 to +150 Unit V V A A mJ W ˚C ˚C
S G
1 : Gate 2 : Collector 3 : Emitter N Type Package
s Equivalent Circuit
D
Avalanche energy capability Allowable power dissipation Channel temperature Storage temperature
* L= 5mH, IL= 5A, 1 pulse
s Electrical Characteristics (Tc = 25˚C)
Parameter Drain-Source cut-off current Gate-Source leakage current Drain-Source breakdown voltage Gate threshold voltage Drain-Source ON-resistance Forward transadmittance Diode forward voltage Reverse recovery time Reverse recovery charge Input capacitance Output capacitance Feedback capacitance Turn-on time Fall time Turn-off time (delay time) Channel-Case heat resistance Channel-Atmosphere heat resistance Symbol IDSS IGSS VDSS Vth RDS(on)1 RDS(on)2 | Yfs | VDSF trr Qrr Ciss Coss Crss ton tf td(off) Rth(ch-c) Rth(ch-a) VDD= 30V, ID= 5A VGS=10V, R L...
