Document
2SK2329(L), 2SK2329(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter
Outline
DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S
2
3
2 3
2SK2329(L), 2SK2329(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 30 ±10 10 40 10 20 150 –55 to +150
Unit V V A A A W °C °C
2
2SK2329(L), 2SK2329(S)
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 30 ±10 — — 0.4 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 10 — — — — — — — — — Typ — — — — — 0.03 0.04 18 1250 540 120 20 145 225 125 0.9 100 Max — — ±10 100 1.4 0.04 0.06 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 10 A, VGS = 0 I F = 10 A, VGS = 0, diF / dt = 20 A / µs Test Conditions I D = 10 mA, VGS = 0 I G = ±200 µA, VDS = 0 VGS = ±6.5 V, VDS = 0 VDS = 25 V, VGS = 0 I D = 1 mA, VDS = 10 V ID = 5 A VGS = 4 V*1 ID = 5 A VGS = 2.5 V*1 ID = 5 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 5 A VGS = 4 V RL = 2 Ω
Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on)
3
2SK2329(L), 2SK2329(S)
Power vs. Temperature Derating 40 Pch (W) I D (A) 100 50 30 20 10 5 2 1 0.5 0.2 0 50 100 150 Tc (°C) 200 0.1 0.5 Ta = 25 °C 1 2 5 10 20 50 Drain to Source Voltage V DS (V)
DC
Maximum Safe Operation Area
10
10
PW =1
µs
s
1m
0µ
Channel Dissipation
20
10
Case Temperature
Typical Output Characteristics 20 10 V 5V 4V 2.5 V 20 2V
Drain Current
0m Op era s( tio 1s Operation in n( ho Tc this area is t) = limited by R DS(on) 25 °C )
s
Typical Transfer Characteristics V DS = 10 V Pulse Test
I D (A)
12
ID Drain Current
(A)
16
16
Drain Current
12 Tc = 75°C 25°C 4 –25°C
8 VGS = 1.5 V
8
4
0
2 4 6 Drain to Source Voltage
8 10 V DS (V)
0
1 2 3 Gate to Source Voltage
5 4 V GS (V)
4
2SK2329(L), 2SK2329(S)
Drain to Source Saturation Voltage vs. Gate to Source Voltage V DS(on) (V) Pulse Test 0.8 Drain to Source On State Resistance R DS(on) ( Ω ) 1.0 Static Drain to Source on State Resistance vs. Drain Current 1 Pulse Test 0.5
0.2 0.1 VGS = 2.5 V 4V
Drain to Source Voltage
0.6
0.4 I D = 10 A 0.2 5A 2A 2 4 6 Gate to So.