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2SK2329 Dataheets PDF



Part Number 2SK2329
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon N-Channel MOSFET
Datasheet 2SK2329 Datasheet2SK2329 Datasheet (PDF)

2SK2329(L), 2SK2329(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter Outline DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SK2329(L), 2SK2329(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body t.

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2SK2329(L), 2SK2329(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter Outline DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SK2329(L), 2SK2329(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 30 ±10 10 40 10 20 150 –55 to +150 Unit V V A A A W °C °C 2 2SK2329(L), 2SK2329(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 30 ±10 — — 0.4 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 10 — — — — — — — — — Typ — — — — — 0.03 0.04 18 1250 540 120 20 145 225 125 0.9 100 Max — — ±10 100 1.4 0.04 0.06 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 10 A, VGS = 0 I F = 10 A, VGS = 0, diF / dt = 20 A / µs Test Conditions I D = 10 mA, VGS = 0 I G = ±200 µA, VDS = 0 VGS = ±6.5 V, VDS = 0 VDS = 25 V, VGS = 0 I D = 1 mA, VDS = 10 V ID = 5 A VGS = 4 V*1 ID = 5 A VGS = 2.5 V*1 ID = 5 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 5 A VGS = 4 V RL = 2 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on) 3 2SK2329(L), 2SK2329(S) Power vs. Temperature Derating 40 Pch (W) I D (A) 100 50 30 20 10 5 2 1 0.5 0.2 0 50 100 150 Tc (°C) 200 0.1 0.5 Ta = 25 °C 1 2 5 10 20 50 Drain to Source Voltage V DS (V) DC Maximum Safe Operation Area 10 10 PW =1 µs s 1m 0µ Channel Dissipation 20 10 Case Temperature Typical Output Characteristics 20 10 V 5V 4V 2.5 V 20 2V Drain Current 0m Op era s( tio 1s Operation in n( ho Tc this area is t) = limited by R DS(on) 25 °C ) s Typical Transfer Characteristics V DS = 10 V Pulse Test I D (A) 12 ID Drain Current (A) 16 16 Drain Current 12 Tc = 75°C 25°C 4 –25°C 8 VGS = 1.5 V 8 4 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0 1 2 3 Gate to Source Voltage 5 4 V GS (V) 4 2SK2329(L), 2SK2329(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage V DS(on) (V) Pulse Test 0.8 Drain to Source On State Resistance R DS(on) ( Ω ) 1.0 Static Drain to Source on State Resistance vs. Drain Current 1 Pulse Test 0.5 0.2 0.1 VGS = 2.5 V 4V Drain to Source Voltage 0.6 0.4 I D = 10 A 0.2 5A 2A 2 4 6 Gate to So.


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