2SK2221

2SK2220, 2SK2221 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Outline TO-3P D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S 2SK2220, 2SK2221 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK2220 2SK2221 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note 1. Value at Tc = 25 °C VGSS ID I DR Pch* Tch Tstg 1 Symbol VDSX Ratings 180 200 ±20 8 8 100 150 –55 to +150 Unit V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SK2220 2SK2221 V(BR)GSS VGS(off) VDS(sat) |yfs| Ciss Coss Crss t on t off Symbol V(BR)DSX Min 180 200 ±20 0.15 — 0.7 — — — — — Typ — — — — — 1.0 600 800 8 250 90 Max — — — 1.45 12 1.4 — — — — — V V V S pF pF pF ns ns I G = ±100 µA, VDS = 0 I D = 100 mA VDS = 10 V I D = 8 A, VGD = 0 V*1 ID = 3 A VDS = 10 V*1 VGS = –5 V VDS = 10 V f = 1 MHz VDD = 30 V ID = 4 A Unit V Test conditions I D = 10 mA, VGS = –10 V Gate to source breakdown voltage Gate to source cutoff voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Note 1. Pulse Te...