2SK2170

Ordering number : ENN4858A 2SK2170 2SK2170 N-Channel Junction Silicon FET Impedance Converter Applications Applications Low-frequency amplifier, analog switch, constant current source. Features Ultrasmall-sized package permitting 2SK2170 applied sets to be made small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Electrical Characteristics at Ta=25°C Conditions Parameter Symbol Conditions Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage Zero-Gate Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Static Drain-to-Source ON-State Resistance Marking : JA V(BR)GDS IGSS VGS(off) IDSS yfs Ciss Crss RDS(on) IG=--10µA, VDS=0 VGS=--20V, VDS=0 VDS=10V, ID=1µA VDS=10V, VGS=0 VDS=10V, VGS=0, f=1kHz VDS=10V, VGS=0, f=1kHz VDS=10V, VGS=0, f=1kHz VDS=10mV, VGS=0 Ratings 30 --30 10 20 100 150 --55 to +150 Unit V V mA mA mW °C °C min --30 Ratings typ --0.2 --0.7 1.2 2.5 5.0 5.0 0.9 250 max --1.0 --2.5 4.0 Unit V nA V mA mS pF pF Ω Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reas...