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2SK2145

Toshiba Semiconductor
Part Number 2SK2145
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Mar 30, 2005
Detailed Description TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK2145 2SK2145 Audio Frequency Low Noise Amplifier Ap...
Datasheet PDF File 2SK2145 PDF File

2SK2145
2SK2145

Overview
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK2145 2SK2145 Audio Frequency Low Noise Amplifier Applications • Including two devices in SM5 (super mini type with 5 leads.
) • High |Yfs|: |Yfs| = 15 mS (typ.
) at VDS = 10 V, VGS = 0 • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.
0dB (typ.
) at VDS = 10 V, ID = 0.
5 mA, f = 1 kHz, Rg = 1 kΩ • High input impedance: IGSS = −1 nA (max) at VGS = −30 V Marking Pin Assignment (top view) Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature Symbol VGDS IG PD (Note 1) Tj Tstg Rating −50 10 300 1...


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