2SK2096

2SK2096 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK2096 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings 60 ±20 45 180 45 45 173 100 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR* Pch* Tch Tstg 2 2SK2096 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 60 ±20 — — 1.0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 25 — — — — — — — — — Typ — — — — — 0.018 0.023 37 3530 1480 300 33 160 450 230 1.3 130 Max — — ±10 250 2.25 0.022 0.028 — — — — — — — — ...