2SK208
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK208
General Purpose and Impedance Converter ...
2SK208
TOSHIBA Field Effect
Transistor Silicon N Channel Junction Type
2SK208
General Purpose and Impedance Converter and Condenser Microphone Applications
High breakdown voltage: VGDS = −50 V High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz) Small package.
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
Symbol
VGDS IG PD Tj Tstg
Rating
−50 10 100 125 −55~125
Unit
V mA mW °C °C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1B
Weight: 0.012 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics Gate cut-off current Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance
Noise figure
Symbol
Test...