2SK2053

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2053 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2053 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras. PACKAGE DIMENSIONS (in mm) 5.7 ±0.1 2.0 ±0.2 1.5 ±0.1 3.65 ±0.1 FEATURES New package intermediate between small signal and power types Gate can be driven by 1.5 V Low ON resistance RDS(on) = 0.40 Ω MAX. @ VGS = 1.5 V, ID = 1.0 A RDS(on) = 0.12 Ω MAX. @ VGS = 4.0 V, ID = 2.5 A EQUIVALENT CURCUIT Drain (D) 1.0 S 0.5 ±0.1 D 0.85 ±0.1 G 0.5 ±0.1 5.4 ±0.25 0.55 0.4 ±0.05 Marking: NA1 2.1 4.2 PIN CONNECTIONS Gate (G) Gate protection diode Source (S) Internal S: Source D: Drain diode G: Gate ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Total Power Dissipation Channel Temperature Operating Temperature Storage Temperature SYMBOL VDSS VGSS ID(DC) ID(pulse) PT Tch Topt Tstg PW ≤ 10 ms, duty cycle ≤ 50 % 7.5 cm2 × 0.7 mm ceramic substrate used VGS = 0 VDS = 0 TEST CONDITIONS RATING 16 ± 7.0 ± 5.0 ± 10.0 2.0 150 –20 to +60 –55 to +150 UNIT V V A A W ˚C ˚C ˚C Document No. D11224EJ2V0DS00 (2nd edition) Date Published June 1996 P Printed in Japan © 1996 2SK2053 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER Drain Cut-Off Curre...