TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2033
High Speed Switching Applications Analog Switch Appli...
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type
2SK2033
High Speed Switching Applications Analog Switch Applications
High input impedance. Low gate threshold voltage: Vth = 0.5~1.5 V Excellent switching times: ton = 0.16 s (typ.)
toff = 0.15 s (typ.) Small package. Enhancement-mode
Marking
Equivalent Circuit
2SK2033
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range
Symbol
VDS VGSS
ID PD Tch Tstg
Rating
20 10 100 200 150 −55~150
Unit
V V mA mW °C °C
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note: This
transistor is electrostatic sensitive device. Please handle with caution.
1 2007-11-01
2SK2033
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source brea...