TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2013
2SK2013
Audio Frequency Power Amplifier Application...
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type
2SK2013
2SK2013
Audio Frequency Power Amplifier Application
z High breakdown voltage z High forward transfer admittance z Complementary to 2SJ313
: VDSS = 180V : |Yfs| = 0.7 S (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Gate−source voltage
Drain current
(Note 2)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS VGSS
ID PD Tch Tstg
180 ±20
1 25 150 −55 to 150
V V A W °C °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Marking
Unit: mm
JEDEC
―
JEITA
SC−67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
K2013
Part No. (or abbreviation code) Lot No.
Note 1
Note 1: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representati...