2SK2008

2SK2008 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter, Motor Control Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2008 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 250 ±30 20 80 20 60 150 –55 to +150 Unit V V A A A W °C °C 2 2SK2008 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 250 ±30 — — 2.0 — 9.0 — — — — — — — — — Typ — — — — — 0.12 14 2340 1000 160 30 125 190 100 1.2 120 Max — — ±10 250 3.0 0.15 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns I F = 20 A, VGS = 0 I F = 20 A, VGS = 0, diF / dt = 100 A / µs Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS =200 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 10 A VGS = 10 V*1 I D = 10 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz I D = 10 A VGS = 10 V RL = 3 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resist...