2SK1917-MR
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
F-II SERIES
Features High speed switching Low on-resistanc...
2SK1917-MR
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
F-II SERIES
Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee
Applications Switching
regulators UPS DC-DC converters General purpose power amplifier
Outline Drawings
TO-220F15
2.54
JEDEC EIAJ
3. Source SC-67
Maximum ratings and characteristics
Absolute maximum ratings ( Tc=25°C unless otherwise specified)
Item
Symbol
Rating
Unit
Drain-source voltage
VDS
250
V
Continuous drain current
ID
10
A
Pulsed drain current
ID(puls]
28
A
Continuous reverse drain current IDR
10
A
Gate-source peak voltage
VGS
±30
V
Max. power dissipation
PD
50
W
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
Equivalent circuit schematic
Gate(G)
Drain(D)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton
(ton=td(on)+tr) Turn-off time toff
(toff=td(off)+tf) Diode forward on-voltage Reverse recovery time
Symbol V(BR)DSS VGS(th) IDSS
IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf VSD trr
Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=250V VGS=0V
VGS=±30V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=150V RG...
