N-Channel Silicon MOSFET
Ordering number:EN4204
N-Channel Silicon MOSFET
2SK1888
Ultrahigh-Speed Switching Applications
Features
· Low ON resis...
Description
Ordering number:EN4204
N-Channel Silicon MOSFET
2SK1888
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting.
Package Dimensions
unit:mm 2063A
[2SK1888]
4.5 10.0 2.8 3.2
3.5 7.2 16.0
18.1 5.6
1.6 1.2
0.75 123 2.55 2.55
Specifications
2.55
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Conditions PW≤10µs, duty cycle≤1%
Allowable Power Dissipation
Channel Temperature Storage Temperature
PD Tc=25°C Tch Tstg
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Symbol
Conditions
V(BR)DSS V(BR)GSS
IDSS IGSS VGS(off) | yfs |
RDS(on) RDS(on)
ID=1mA, VGS=0 IG=±100µA, VDS=0 VDS=30V, VGS=0 VGS=±12V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=18A ID=18A, VGS=10V ID=18A, VGS=4V
2.55
2.4 14.0
2.4
0.7
1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML
Ratings 30
±15 30
120 2.0 30 150 –55 to +150
Unit V V A A W W ˚C ˚C
Ratings min typ max
Unit
30 V
±15 V
100 µA
±10 µA
1.0 2.0 V
17.5
29
S
15 25 mΩ
25 35 mΩ
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications t...
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