2SK1880

2SK1880(L), 2SK1880(S) Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SK1880(L), 2SK1880(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 600 ±30 1.5 3.0 1.5 20 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1880(L), 2SK1880(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 600 ±30 — — 2.0 — 0.85 — — — — — — — — — Typ — — — — — 6.5 1.4 250 55 8 10 25 35 30 0.95 350 Max — — ±10 100 3.0 8.0 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V µs I F = 1.5 A, VGS = 0 I F = 1.5 A, VGS = 0, diF / dt = 100 A / µs Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 500 V, VGS = 0 I D = 1 mA, VDS = 10 V ID = 1 A VGS = 10 V*1 ID = 1 A VDS = 20 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 1 A VGS = 10 V RL = 30 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resis...