2SK184

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK184 2SK184 Low Noise Audio Amplifier Applications Unit: mm · High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) · High breakdown voltage: VGDS = −50 V · Low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ) · High input impedance: IGSS = −1 nA (max) (VGS = −30 V) · Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating -50 10 200 125 -55~125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-4E1C Weight: 0.13 g (typ.) Characteristics Symbol Test Condition Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Noise figure IGSS V (BR) GDS VGS = -30 V, VDS = 0 VDS = 0, IG = -100 mA IDSS (Note) VDS = 10 V, VGS = 0 VGS (OFF) ïYfsï Ciss VDS = 10 V, ID = 0.1 mA VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz Crss NF (1) VDG = 10 V, ID = 0, f = 1 MHz VDS = 10 V, RG = 1 kW, ID = 0.5 mA, f = 10 Hz NF (2) VDS = 10 V, RG = 1 kW, ID = 0.5 mA, f = 1 kHz Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14.0 mA Min Typ. Max Unit ¾ ¾ -1.0 nA -50 ¾ ¾ V 1.2 ¾ 14.0 mA -0.2 ¾ -1.5 V 4.0 15 ¾ mS ¾ 13 ¾ pF ¾ 3 ¾ pF ¾ 5 10 dB ¾1 2 1 2003-03-25 2SK18...