2SK1824

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1824 N-CHANNEL MOS FET FOR SWITCHING The 2SK1824 is a N-channel vertical type MOS FET that is driven at 2.5 V. Because this MOS FET can be driven on a low voltage and because it is not necessary to consider the drive current, the 2SK1824 is ideal for driving the actuator of power-saving systems, 1.6 ± 0.1 PACKAGE DIMENSIONS (in mm) 0.3 ± 0.05 0.1 +0.1 –0.05 such as VCR cameras and headphone stereo systems. Moreover, the 2SK1824 is housed in a super small mini-mold package so that it can help increase the mounting density on the printed circuit board and lower the mounting cost, contributing to miniaturization of the application systems. 0.8 ± 0.1 D 0 to 0.1 G 0.2 +0.1 –0 0.5 0.5 0.6 0.75 ± 0.05 S FEATURES Small mounting area: about 60 % of the conventional mini-mold package (SC-70) Can be automatically mounted Can be directly driven by 3-V IC 1.0 1.6 ± 0.1 EQUIVALENT CIRCUIT Drain (D) The internal diode in the right figure is a parasitic diode. The protection diode is to protect the product from damage due to static electricity. If there is a danger that an extremely high voltage will be applied across the gate and source in the actual circuit, a gate protection circuit such as an external constant-voltage diode is necessary. Gate (G) Gate protection diode Source (S) Internal diode PIN CONNECTIONS S: Source D: Drain G: Gate Marking: B1 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate to So...