N-Channel Silicon MOSFET
Ordering number:EN3831
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.
N-Channel Silico...
Description
Ordering number:EN3831
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.
N-Channel Silicon MOSFET
2SK1736
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2087A
[2SK1736]
2.5
1.45
6.9 1.0
4.0 1.0
4.5 1.0
0.9 1
Specifications
2.54
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID IDP PD Tch
Tstg
Conditions PW≤10µs, duty cycle≤1%
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Symbol
Conditions
V(BR)DSS IDSS IGSS
VGS(off) | yfs |
RDS(on) RDS(on)
ID=1mA, VGS=0 VDS=100V, VGS=0 VGS=±12V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=500mA ID=500mA, VGS=10V ID=500mA, VGS=4V
1.0
0.6 0.5
23
2.54
0.45
1 : Source 2 : Drain 3 : Gate SANYO : NMP
Ratings 100 ±15 1 4 1 150
–55 to +150
Unit V V A A W ˚C ˚C
Ratings min typ max
Unit
100 V
100 µA
±10 µA
1.0 2.0 V
0.9 1.5
S
0.7 0.95 Ω
0.95 1.3 Ω
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose fail...
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