2SK170

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 2SK170 Low Noise Audio Amplifier Applications Unit: mm Recommended for first stages of EQ and M.C. head amplifiers. High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) High breakdown voltage: VGDS = −40 V Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz) High input impedance: IGSS = −1 nA (max) (VGS = −30 V) Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating −40 10 400 125 −55~125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC TC-92 JEITA SC-43 TOSHIBA 2-5F1D Weight: 0.21 g (typ.) Characteristics Symbol Test Condition Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Noise figure IGSS VGS = −30 V, VDS = 0 V (BR) GDS VDS = 0, IG = −100 µA IDSS (Note) VDS = 10 V, VGS = 0 VGS (OFF) Yfs Ciss Crss NF (1) VDS = 10 V, ID = 0.1 µA VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz VDG = 10 V, ID = 0, f = 1 MHz VDS = 10 V, ID = 1.0 mA, RG = 1 kΩ, f = 1 kHz NF (2) VDS = 10 V, ID = 1.0 mA, RG = 1 kΩ, f = 1 kHz Note: IDSS classification GR: 2.6~6.5 mA, BL: 6.0~12 mA, V: 10~20 mA Min Typ. Max Unit   −1.0 nA −40   V 2.6  20 mA −0.2  −1.5 V  22  mS  30  pF  ...