2SK1698

2SK1698 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC – DC converter, motor drive, power switch, solenoid drive Outline UPAK 2 1 4 3 D G 1. Gate 2. Drain 3. Source 4. Drain S 2SK1698 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 100 ±20 0.3 1.2 0.3 1 150 –55 to +150 Unit V V A A A W °C °C Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the alumina ceramic board (12.5 × 20 × 0.7 mm) 3. Marking is “FY”. 2 2SK1698 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 100 ±20 — — 1.0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 0.22 — — — — — — — — — Typ — — — — — 3.5 4.5 0.35 35 14 3.5 2 4 17 15 0.9 80 Max — — ±10 50 2.0 4.5 6.5 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ...