2SK1636S

2SK1636(L), 2SK1636(S) Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK1636(L), 2SK1636(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 250 ±30 15 60 15 75 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1636(L), 2SK1636(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 250 ±30 — — 2.0 — 6.0 — — — — — — — — — Typ — — — — — 0.22 10.0 1250 510 85 24 85 110 60 1.0 400 Max — — ±10 250 3.0 0.27 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns I F = 15 A, VGS = 0 I F = 15 A, VGS = 0, diF/dt = 100 A/µs I D = 8 A, VGS = 10 V, RL = 3.75 Ω Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 200 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 8 A, VGS = 10 V *1 I D = 8 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutof...