2SK1540(L)(S), 2SK1541(L)(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low o...
2SK1540(L)(S), 2SK1541(L)(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching
regulator and DC-DC converter
Outline
LDPAK 4 4
1 2 1 D G 2 3
3
S
1. Gate 2. Drain 3. Source 4. Drain
2SK1540(L)(S), 2SK1541(L)(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK1540 2SK1541 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Symbol VDSS
Ratings 450 500 ±30 7 28 7 60 150 –55 to +150
Unit V
V A A A W °C °C
2
2SK1540(L)(S), 2SK1541(L)(S)
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Symbol Min 2SK1540 V(BR)DSS 2SK1541 V(BR)GSS I GSS 450 500 ±30 — — — — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 4.0 — — — — — — — — — — 0.6 0.7 6.5 1050 280 40 15 55 95 40 0.95 320 3.0 0.8 0.9 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 7 A, VGS = 0 I F = 7 A, VGS = 0, diF/dt = 100 A/µs I D = 4 A, VGS = 10 V, RL = 7.5 Ω I D = 4 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V Ω I D = 1 mA, VDS = 10 V I D = 4 A, VGS = 10 V *1 Typ — Max — Unit V Test conditio...