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2SK1521 Dataheets PDF



Part Number 2SK1521
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon N-Channel MOSFET
Datasheet 2SK1521 Datasheet2SK1521 Datasheet (PDF)

2SK1521, 2SK1522 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline TO-3PL D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1521, 2SK1522 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1521 2SK1522 Gate to source voltage Drain current Drain peak current Body to drain.

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2SK1521, 2SK1522 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline TO-3PL D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1521, 2SK1522 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1521 2SK1522 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 ±30 50 200 50 250 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1521, 2SK1522 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1521 V(BR)DSS 2SK1522 V(BR)GSS I GSS 450 500 ±30 — — — — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 22 — — — — — — — — — — 0.08 0.085 35 8700 2400 235 85 250 600 250 1.1 120 3.0 0.10 0.11 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 50 A, VGS = 0 I F = 50 A, VGS = 0, diF/dt = 100 A/µs I D = 25 A, VGS = 10 V, RL = 1.2 Ω I D = 25 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V Ω I D = 1 mA, VDS = 10 V I D = 25 A, VGS = 10 V *1 Typ — Max — Unit V Test conditions I D = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1521 I DSS 2SK1522 Gate to source cutoff voltage Static Drain to source 2SK1521 RDS(on) on state resistance 2SK1522 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test 3 2SK1521, 2SK1522 Power vs. Temperature Derating 300 Channel Dissipation Pch (W) 1,000 300 Drain Current ID (A) 100 30 10 3 1 0.3 Ta = 25°C 0.1 0 50 100 Case Temperature TC (°C) 150 1 a are his n) n t R DS (o i n tio by era ted DC Op limi is Maximum Safe Operation Area 200 PW er at 10 10 0 = Op 10 (T 1m m s( 1 µs µs s ot ion Sh 100 C = ) 25 °C ) 2SK1521 2SK1522 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 100 8V 10 V 80 Drain Current ID (A) Pulse Test 5.5 V 60 5V 6V 80 Drain Current ID (A) 100 Typical Transfer Characteristics VDS = 20 V Pulse Test 60 40 40 20 4.5 V VGS = 4 V 20 TC = 75°C 25°C –25°C 0 4 12 16 8 20 Drain to Source Voltage VDS (V) 0 2 6 8 4 10 Gate to Source Voltage VGS (V) 4 2SK1521, 2SK1522 Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance RDS (on) (Ω) 5 50 A Pulse Test 1 Pulse Test 0.5 Static Drain to Source on State Resistance vs. Drain Current 4 3 0.2 0.1 0.05 VGS = 10, 15 V 2 20 A ID = 10 A 1 0.02 0.01 5 10 20 50 100 200 Drain Current ID (A) 500 0 4 12 16 8 20 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) (Ω) Pulse Test 0.4 Forward Transfer Admittance yfs (S) 0.5 50 Forward Transfer Admittance vs. Drain Current 20 10 5 TC = –25°C 25°C 75°C 0.3 ID = 50 A 20 A 0.2 2 1 VDS = 20 V Pulse Test 1 2 5 10 20 Drain Current ID (A) 50 0.1 10 A 0 –40 0 80 120 40 Case Temperature TC (°C) 160 0.5 0.5 5 2SK1521, 2SK1522 Body to Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) 10,000 Ciss 200 Capacitance C (pF) 100 50 di/dt = 100 A/µs, Ta = 25°C VGS = 0 Pulse Test 1,000 Coss Typical Capacitance vs. Drain to Source Voltage 20 10 100 Crss VGS = 0 f = 1 MHz 10 5 0.5 1 2 5 10 20 Reverse Drain Current IDR (A) 50 0 20 10 30 40 Drain to Source Voltage VDS (V) 50 Dynamic Input Characteristics 500 Drain to Source Voltage VDS (V) VDD = 100 V 250 V 400 V 300 VDS 200 ID = 50 A 100 VDD = 400 V 250 V 100 V 0 80 240 320 160 Gate Charge Qg (nc) 400 0 4 8 VGS 12 20 Gate to Source Voltage VGS (V) 5,000 Switching Characteristics . VGS = 10 V, VDD = . 30 V PW = 2 µs, duty < 1% Switching Time t (ns) 400 16 2,000 1,000 500 tf 200 100 50 0.5 tr td (on) td (off) 1 2 5 10 20 Drain Current ID (A) 50 6 2SK1521, 2SK1522 Reverse Drain Current vs. Source to Drain Voltage 100 Reverse Drain Current IDR (A) Pulse Test 80 60 40 VGS = 0, –5 V 10 V 20 0 0.8 2.0 0.4 1.2 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C 1 D=1 0.5 0.3 0.1 0.2 0.1 θch–c (t) = γS (t) · θch–c θch–c = 0.5°C/W, TC = 25°C PDM lse t Pu 0.05 0.02 0.03 0.01 1 Sh o T 1m 10 m Pulse Width PW (s) 100 m PW 1 D = PW T 0.01 10 µ 100 µ 10 Switching Time Test Circuit Vin M.


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