N-Channel Silicon MOSFET
Ordering number:EN3508A
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.
N-Channel Silic...
Description
Ordering number:EN3508A
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.
N-Channel Silicon MOSFET
2SK1467
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm 2062A
[2SK1467]
4.5 1.6
1.5
1.0 2.5 4.25max
0.4 0.5
32 1.5 3.0
1
0.75
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse)
Allowable Power Dissipation
Channel Temperature Storage Temperature
Symbol VDSS VGSS
ID IDP
PD
Tch Tstg
Conditions
Tc=25°C Mounted on a ceramic board (250mm2×0.8mm)
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage Zero-Gate Votlage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : KC
Symbol
Conditions
V(BR)DSS IDSS IGSS
VGS(off) | yfs |
RDS(on)1 RDS(on)2
ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±12V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=10V ID=1A, VGS=4V
0.4
1 : Gate 2 : Drain 3 : Source SANYO : PCP
Ratings 30
±15 2 8
3.5 1.5 150 –55 to +150
Unit V V A A W W ˚C ˚C
Ratings min typ max
Unit
30 V
100 µA
±10 µA
1.0 2.0 V
1.2 2.0
S
0.2 0.3 Ω
0.3 0.45 Ω
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other ap...
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