2SK1460

Ordering number:EN3463A N-Channel Silicon MOSFET 2SK1460 Ultrahigh-Speed Switching Applications Features · Low ON-state resistance. · Ultrahigh-speed switching. · Micaless package facilitating mounting. Package Dimensions unit:mm 2078B [2SK1460] 10.0 3.5 4.5 2.8 3.2 7.2 16.0 16.1 0.9 1.2 14.0 3.6 0.7 0.75 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI (LS) Conditions 2.4 0.6 1.2 Ratings 900 ±30 3.5 7 2.0 40 150 –55 to +150 Unit V V A A W W ˚C ˚C www.DataSheet4U.com Storage Temperature Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) ID=1mA, VGS=0 VDS=900V, VGS=0 VGS=±30V, VDS=0 VDS=10V, VDS=20V, ID=1mA ID=2A 2.0 1.0 2.0 2.8 3.6 Conditions Ratings min 900 1.0 ±100 3.0 typ max Unit V mA nA V S Ω ID=2A, VGS=10V (Note) Be careful in handling the 2SK1460 because it has no protection diode between gate and source. Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applicatio...