N-Channel Silicon MOSFET
Ordering number:EN3568
N-Channel Silicon MOSFET
2SK1430
Ultrahigh-Speed Switching Applications
Features
· Low ON-state...
Description
Ordering number:EN3568
N-Channel Silicon MOSFET
2SK1430
Ultrahigh-Speed Switching Applications
Features
· Low ON-state resistance. · Ultrahigh-speed switching. · Converters. · Micaless package facilitating easy mounting.
Package Dimensions
unit:mm 2063A
[2SK1430]
4.5 10.0 2.8 3.2
3.5 7.2 16.0
18.1 5.6
1.6 1.2
0.75 123 2.55 2.55
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
2.55
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS ID=1mA, VGS=0
Zero-Gate Voltage Drain Current
IDSS VDS=100V, VGS=0
Gate-to-Source Leakage Current
IGSS VGS=±20V, VDS=0
Cutoff Voltage
VGS(off) VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs | VDS=10V, ID=6A
Static Drain-to-Source ON-State Resistance
RDS(on) ID=6A, VGS=10V
(Note) Be careful in handling the 2SK1430 because it has no protection diode between gate and source.
2.55
2.4 14.0
2.4
0.7
1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML
Ratings 100 ±20 10 40 25 2.0 150
–55 to +150
Unit V V A A W W ˚C ˚C
Ratings min typ max
Unit
100 V
100 µA
±100 nA
1.5 2.5 V
5.0 8.0
S
0.12 0.16 Ω
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can...
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