2SK1403A

2SK1403, 2SK1403A Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1403, 2SK1403A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1403 2SK1403A Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 600 650 ±30 8 32 8 100 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1403, 2SK1403A Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage K1403 K1403A V(BR)GSS I GSS I DSS Symbol Min V(BR)DSS 600 650 ±30 — — Typ — — — — — Max — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 500 V, VGS = 0 VDS = 550 V, VGS = 0 VGS(off) RDS(on) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 4.0 — — — — — — — — — — 0.9 1.0 6.5 1180 265 50 15 50 105 45 0.95 420 3.0 1.3 1.4 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 8 A, VGS = 0 I F = 8 A, VGS = 0, diF/dt = 100 A/µs I D = 4 A, VGS = 10 V, RL = 7.5 Ω I D = 4 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V Ω I D = 1 mA, VDS = 10 V I D = 4 A, VGS = 10 V *1 Unit V Test conditions I D = 10 mA, VGS = 0 ...