2SK1398

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1398 N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING 5 DESCRIPTION The 2SK1398 is N-channel MOS Field Effect Transistor designed for a high-speed switching device in digital circuits. The 2SK1398 is driven by a 2.5-V power source, it is suitable for applications including headphone stereos which need power saving. ORDERING INFORMATION PART NUMBER 2SK1398 PACKAGE SST FEATURES Directly driven by ICs having a 3-V power supply. Not necessary to consider driving current because of its high input impedance. Possible to reduce the number of parts by omitting the bias resistor. Can be used complementary with the 2SJ184. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS= 0 V) Gate to Source Voltage (VDS= 0 V) Drain Current (DC) Drain Current (pulse) Note VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 50 ±7.0 ±100 ±200 250 150 –55 to +150 V V mA mA mW °C °C Total Power Dissipation Channel Temperature Storage Temperature Note PW ≤ 10 ms, Duty cycle ≤ 50 % The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14772EJ2V0DS00 (2nd edition) (Previous No. TC-2342) Date Published March 2000 NS CP(K) Printed in Japan The mark 5 shows major revised points. © 1991, 2000 2SK1398 ELECTRICA...