2SK1374

Silicon MOS FETs (Small Signal) 2SK1374 Silicon N-Channel MOS FET For switching unit: mm 2.1±0.1 s Features q High-speed switching q Wide frequency band q Incorporating a built-in gate protection-diode q Allowing 2.5V drive 0.65 0.425 1.25±0.1 0.425 1 2.0±0.2 1.3±0.1 0.65 3 2 s Absolute Maximum Ratings (Ta = 25°C) 0.9±0.1 Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature VDS VGSO ID IDP PD Tch Tstg 50 10 50 100 150 150 −55 to +150 V V mA mA mW °C °C 0.7±0.1 0 to 0.1 0.2±0.1 1: Gate 2: Source 3: Drain EIAJ: SC-70 S-Mini Type Package (3-pin) Marking Symbol: 4V s Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | Coss ton*2 toff *2 *1 Conditions VDS = 20V, VGS = 0 VGS = 10V, VDS = 0 ID = 10µA, VGS = 0 ID = 100µA, VDS = 5V ID = 10mA, VGS = 2.5V ID = 10mA, VDS = 5V, f = 1kHz VDS = 5V, VGS = 0, f = 1MHz VDD = 5V, VGS = 0 to 2.5V, RL = 470Ω VDD = 5V, VGS = 2.5 to 0V, RL = 470Ω min typ max 1 1 0.15–0.05 +0.1 Parameter Symbol Ratings Unit 0.2 0.3–0 +0.1 Unit µA µA V 50 0.5 100 0.8 27 1.1 50 V Ω mS pF pF pF µs µs 20 39 4.5 4.1 1.2 0.2 0.2 Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capaci...