2SK1168

2SK1167, 2SK1168 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1167, 2SK1168 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1167 2SK1168 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 ±30 15 60 15 100 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1167, 2SK1168 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1167 V(BR)DSS 2SK1168 V(BR)GSS I GSS 450 500 ±30 — — — — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 8 — — — — — — — — — — 0.25 0.30 13 2050 600 75 30 110 150 70 1.0 500 3.0 0.36 0.40 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 15 A, VGS = 0 I F = 15 A, VGS = 0, diF/dt = 100 A/µs I D = 8 A, VGS = 10 V, RL = 3.75 Ω I D = 8 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V Ω I D = 1 mA, VDS = 10 V I D = 8 A, VGS = 10 V *1 Typ — Max — Unit V Test conditions I D = 10 mA, VGS = 0 Gate to sourc...