Document
2SK1165, 2SK1166
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
TO-3P
D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source
S
2SK1165, 2SK1166
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK1165 2SK1166 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Symbol VDSS
Ratings 450 500 ±30 12 48 12 100 150 –55 to +150
Unit V
V A A A W °C °C
2
2SK1165, 2SK1166
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Symbol Min 2SK1165 V(BR)DSS 2SK1166 V(BR)GSS I GSS 450 500 ±30 — — — — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 6.0 — — — — — — — — — — 0.40 0.45 10 1450 410 55 20 70 120 60 1.0 450 3.0 0.55 0.60 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 12 A, VGS = 0 I F = 12 A, VGS = 0, diF/dt = 100 A/µs I D = 6 A, VGS = 10 V, RL = 5 Ω I D = 6 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V Ω I D = 1 mA, VDS = 10 V I D = 6 A, VGS = 10 V *1 Typ — Max — Unit V Test conditions I D = 10 mA, VGS = 0
Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current
2SK1165 I DSS 2SK1166
Gate to source cutoff voltage
Static Drain to source 2SK1165 RDS(on) on state resistance 2SK1166
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test
3
2SK1165, 2SK1166
Power vs. Temperature Derating 120 Channel Dissipation Pch (W) 100 30 Drain Current ID (A) 80 10 3 1.0 0.3 0.1 0 50 100 Case Temperature TC (°C) 150 1 Ta = 25°C
10
Maximum Safe Operation Area
10
0 µs
O is per Lim at ite ion d in by th R is A DS re (o a n
µs
D
C
PW
)
1
= 10
m
O
s
pe
ra
40
tio s (1 n (T sho t) C = 25 °C
m
)
2SK1166 2SK1165
3 30 10 100 300 1,000 Drain to Source Voltage VDS (V)
Typical Output Characteristics 20 20 10 V 6V 16 Drain Current ID (A) 8V 5.5 V Drain Current ID (A) 16
Typical Transfer Characteristics
VDS = 20 V Pulse Test
12
5.0 V
12
8 4.5 V 4 VGS = 4 V 0 20 10 30 40 Drain to Source Voltage VDS (V) 50
8 75°C –25°C TC = 25°C
4
0
4 2 6 8 Gate to Source Voltage VGS (V)
10
4
2SK1165, 2SK1166
Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 Pulse Test 15 A Static Drain to Source on State Resistance vs. Drain Current Static Drain to Source on State Resistance RDS (on) (Ω) 5 Pulse Test VGS = 10 V
8
.