N-Channel Silicon MOSFET
Ordering number:EN3439
Features
· Low ON-state resistance. · Ultrahigh-speed switching.
N-Channel Silicon MOSFET
2SK105...
Description
Ordering number:EN3439
Features
· Low ON-state resistance. · Ultrahigh-speed switching.
N-Channel Silicon MOSFET
2SK1052
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2052C
[2SK1052]
10.2 3.6 5.1
4.5 1.3
2.7 6.3
15.1
18.0 5.6
1.2
0.8 123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
2.55
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Electrical Characteristics at Ta = 25˚C
2.55
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS ID=1mA, VGS=0
Zero-Gate Voltage Drain Current
IDSS VDS=450V, VGS=0
Gate-to-Source Leakage Current
IGSS VGS=±30V, VDS=0
Cutoff Voltage
VGS(off) VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs | VDS=10V, ID=0.3A
Static Drain-to-Source ON-State Resistance
RDS(on) ID=0.3A, VGS=10V
(Note) Be careful in handling the 2SK1052 because it has no protection diode between gate and source.
2.7 14.0
1 : Gate
0.4
2 : Drain
3 : Source
EIAJ : SC-46
SANYO : TO-220AB
Ratings 450 ±30 0.5 2.0 30 1.75 150
–55 to +150
Unit V V A A W W ˚C ˚C
Ratings min typ max
Unit
450 V
1.0 mA
±100 nA
2.0 3.0 V
0.4 0.8
S
5.5 7.0 Ω
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high lev...
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