DatasheetsPDF.com

2SJ587

Hitachi Semiconductor
Part Number 2SJ587
Manufacturer Hitachi Semiconductor
Description Silicon P Channel MOS FET High Speed Switching
Published Mar 30, 2005
Detailed Description 2SJ587 Silicon P Channel MOS FET High Speed Switching ADE-208-801 (Z) 1st.Edition. June 1999 Features • Low on-resistan...
Datasheet PDF File 2SJ587 PDF File

2SJ587
2SJ587

Overview
2SJ587 Silicon P Channel MOS FET High Speed Switching ADE-208-801 (Z) 1st.
Edition.
June 1999 Features • Low on-resistance R DS = 8.
5 Ω typ.
(VGS = -4 V , I D = -25 mA) R DS = 15 typ.
(VGS = -2.
5 V , ID = -10 mA) • 2.
5 V gate drive device.
• Small package (SMPAK) Outline SMPAK 3 1 2 D 3 2 G 1.
Source 2.
Gate 3.
Drain S 1 2SJ587 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note 2 Note1 Ratings -20 ±10 -50 -200 -50 100 150 –55 to +150 Unit V V mA mA mA mW °C °...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)