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2SJ586

Hitachi Semiconductor

Silicon P Channel MOS FET High Speed Switching


Description
2SJ586 Silicon P Channel MOS FET High Speed Switching ADE-208-771A (Z) 2nd.Edition. June 1999 Features Low on-resistance R DS = 4.1 Ω typ. (VGS = -4 V , I D = -50 mA) R DS = 6.0 Ω typ. (VGS = -2.5 V , ID = -50 mA) 2.5 V gate drive device. Small package (CMPAK) Outline CMPAK 3 1 2 D 3 2 G 1. Source 2. Gate 3. Drain S 1 2SJ586 Absolute Maximum Rat...



Hitachi Semiconductor

2SJ586

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