Silicon P Channel MOS FET High Speed Switching
2SJ575
Silicon P Channel MOS FET High Speed Switching
ADE-208-740B (Z) 3rd.Edition. June 1999 Features
• Low on-resista...
Description
2SJ575
Silicon P Channel MOS FET High Speed Switching
ADE-208-740B (Z) 3rd.Edition. June 1999 Features
Low on-resistance R DS =2.8 Ω typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 Ω typ. (V GS = -4 V , ID = -50 mA) 4 V gate drive device. Small package (MPAK)
Outline
MPAK
3 1
D 3
2
2 G
1. Source 2. Gate 3. Drain
S 1
2SJ575
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg
Note 2 Note1
Ratings -30 ±20 -100 -400 -100 400 150 –55 to +150
Unit V V mA mA mA mW °C °C
1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value on the alumina ceramic board (12.5x20x0.7mm)
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min -30 ±20 — — -1.3 — — 68 — — — — — — — Typ — — — — — 2.8 5.7 105 25 20 8 10 15 40 45 Max — — ±5 -1 -2.3 3.3 7.9 — — — — — — — — Unit V V µA µA V Ω Ω mS pF pF pF ns ns ns ns Test Conditions I D = -100 µA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = -30 V, VGS = 0 I D = -10µA, VDS = -5 V
ID = -50 mA,VGS = -10 V Note 3 ID = -50 mA,VGS = -4 V Note 3 ID = -50 mA, V DS = -10 V Note 3
Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward tran...
Similar Datasheet