2SJ567
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV)
2SJ567
Switching Applications
Chopper Regula...
2SJ567
TOSHIBA Field Effect
Transistor Silicon P-Channel MOS Type (π-MOSV)
2SJ567
Switching Applications
Chopper
Regulator, DC/DC Converter and Motor Drive Applications
6.5 ± 0.2 5.2 ± 0.2
Unit: mm
0.6 MAX.
1.5 ± 0.2
Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = −100 μA (max) (VDS = −200 V) Enhancement model: Vth = −1.5 to −3.5 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1.2 MAX.
0.8 MAX. 0.6 ± 0.15
1
1.05 MAX. 23
1.1 ± 0.2 0.6 MAX.
5.5 ± 0.2 9.5 ± 0.3
2.3 ± 0.2 0.1 ± 0.1
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
−200
V
−200
V
±20
V
−2.5 A
−10
20
W
97.5
mJ
−2.5
A
2.0
mJ
150
°C
−55 to 150
°C
2.3 ± 0.15 2.3 ± 0.15
1. GATE 2. DRAIN
(HEAT SINK) 3. SOURSE
2 1
3
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperatu...