Ultrahigh-Speed Switching Applications
Ordering number:ENN6120A
P-Channel Silicon MOSFET
2SJ560
Ultrahigh-Speed Switching Applications
Features
· Low ON-resi...
Description
Ordering number:ENN6120A
P-Channel Silicon MOSFET
2SJ560
Ultrahigh-Speed Switching Applications
Features
· Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive.
Package Dimensions
unit:mm 2157
[2SJ560]
4.5 1.6 1.5
0.4 3 1.5 2 3.0 0.75
0.5 1
1.0
4.25max
2.5
0.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
PW≤10µs, duty cycle≤1%
1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view)
Conditions
Ratings –20 ±10 –1.5 –6 1.3 3.5 150 –55 to +150
Unit V V A A W W ˚C
˚C
Mounted on a ceramic board (250mm2× 0.8mm)
Tc=25˚C
Electrical Characteristics at Ta = 25˚C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 ID=–1mA, VGS=0 VDS=–20V, VGS=0 VGS=±8V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–750mA ID=–750mA, VGS=–4V ID=–100mA, VGS=–2.5V –0.4 1.1 1.6 420 630 600 1000 Conditions Ratings min –20 –10 ±10 –1.4 typ max Unit V µA µA V S mΩ mΩ
Marking : JL
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support syst...
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