2SJ555

2SJ555 Silicon P Channel MOS FET High Speed Power Switching ADE-208-634A (Z) 2nd. Edition Jun 1998 Features Low on-resistance R DS(on) = 0.017 Ω typ. Low drive current. 4V gate drive devices. High speed switching. Outline TO–3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SJ555 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –60 –240 –60 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –60 308 125 150 –55 to +150 EAR Pch Tch Tstg 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C 3. Value at Tch = 25° C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min –60 ±20 — — –1.0 — — 27 — — — — — — — — — Typ — — — — — 0.017 0.024 45 4100 2100 450 32 270 570 360 –1.1 115 Max — — –10 ±10 –2.0 0.022 0.036 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = –60A, VGS = 0 I F = –60A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = –10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = –60 V, VGS = 0 VGS = ±16V, VDS = 0 I D = –1mA, VDS = –10V I D = –30A, VGS = –10V Note4 I D = –30A, VGS = –4V Note4 I D = –30A, VDS = –10V Note4 VDS = –10V VGS = 0 f = 1MHz VGS = –10V, I D = –30A RL = 1Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GS...