DatasheetsPDF.com

2SJ553L Dataheets PDF



Part Number 2SJ553L
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon P-Channel MOSFET
Datasheet 2SJ553L Datasheet2SJ553L Datasheet (PDF)

2SJ553(L),2SJ553(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-650B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.028 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline LDPAK 4 D 1 G 1 4 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ553(L),2SJ553(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Rati.

  2SJ553L   2SJ553L


Document
2SJ553(L),2SJ553(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-650B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.028 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline LDPAK 4 D 1 G 1 4 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ553(L),2SJ553(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –60 ±20 –30 –120 –30 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 –30 77 75 150 –55 to +150 EAR Pch Tch Tstg 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C 3. Value at Tch = 25° C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min –60 ±20 — — –1.0 — — 15 — — — — — — — — — Typ — — — — — 0.028 0.038 25 2500 1300 300 25 150 350 220 –0.95 100 Max — — –10 ±10 –2.0 0.037 0.055 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = –30A, VGS = 0 I F = –30A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = –10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = –60 V, VGS = 0 VGS = ±16V, VDS = 0 I D = –1mA, VDS = –10V I D = –15A, VGS = –10V Note4 I D = –15A, VGS = –4V Note4 I D = –15A, VDS = –10V Note4 VDS = –10V VGS = 0 f = 1MHz VGS = –10V, I D = –15A RL = 2Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time I DSS I GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf Body–drain diode forward voltage VDF Body–drain diode reverse recovery time Note: 4. Pulse test t rr 2 2SJ553(L),2SJ553(S) Main Characteristics Power vs. Temperature Derating 80 –1000 Maximum Safe Operation Area Pch (W) I D (A) 10 –100 PW 60 µs 10 0 1 = 10 ms Channel Dissipation Drain Current 40 –10 DC m µs s 20 –1 (1 er sh ot) (T atio Operation in c= n 25 this area is °C limited by R DS(on) ) Op –0.1 Ta = 25 °C 0 50 100 150 Tc (°C) 200 Case Temperature –0.1 –1 –10 –100 Drain to Source Voltage V DS (V) Typical Output Characteristics –50 –8 V –3.5 V Pulse Test –50 Typical Transfer Characteristics V DS = –10 V I D (A) –5 V –30 –4 V VGS = –10 V –20 I D (A) Drain Current –40 –40 –30 Drain Current –3 V –20 Tc = 75 °C 25 °C -25 °C 0 –1 –2 –3 Gate to Source Voltage –4 –5 V GS (V) –10 –2.5 V –2 V –10 0 –2 –4 –6 Drain to Source Voltage –8 –10 V DS (V) 3 2SJ553(L),2SJ553(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source On State Resistance R DS(on) ( Ω ) –5 Drain to Source Saturation Voltage V DS(on) (V) Static Drain to Source on State Resistance vs. Drain Current 1 0.5 0.2 0.1 VGS = –4 V –10 V –4 –3 –2 I D = –50 A –1 –20 A –10 A 0 –4 –8 –12 Gate to Source Voltage –16 –20 V GS (V) 0.05 0.02 0.01 –1 –3 –10 –30 –100 –300 –1000 Drain Current I D (A) Static Drain to Source on State Resistance R DS(on) ( Ω) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 0.1 100 30 Forward Transfer Admittance vs. Drain Current 0.08 I D = –50 A V GS = –4 V 0.04 –10 A –20 A –50 A –10,–20A Tc = –25 °C 10 3 1 0.3 V DS = –10 V –100 25 °C 0.06 75 °C 0.02 0 –40 V GS = –10 V 0 40 80 120 160 Case Temperature Tc (°C) 0.1 –0.1 –0.3 –1 –3 –10 –30 Drain Current I D (A) 4 2SJ553(L),2SJ553(S) Body–Drain Diode Reverse Recovery Time 1000 10000 3000 1000 Coss 300 100 30 10 0 –10 –20 –30 –40 –50 Drain to Source Voltage V DS (V) Crss Ciss VGS = 0 f = 1 MHz Typical Capacitance vs. Drain to Source Voltage Reverse Recovery Time trr (ns) 200 100 50 20 10 0.1 di / dt = 50 A / µs VGS = 0, Ta = 25 °C 10 100 30 3 1 0.3 Reverse Drain Current I DR (A) Capacitance C (pF) 500 Dynamic Input Characteristics Switching Characteristics V DS (V) –20 Drain to Source Voltage I D = –30 A –4 Switching Time t (ns) V DD = –10 V –25 V –50 V V DS V GS (V) 0 0 1000 500 200 100 50 t d(on) 20 10 –0.1 –0.3 V GS = –10 V, V DD = –30 V PW = 5 µs, duty < =1% –3 –1 –10 –30 Drain Current I D (A) –100 t d(off) tf –40 V GS –60 V DD = –10 V –25 V –50 V –8 Gate to Source Voltage tr –12 –80 –16 –20 200 –100 0 160 40 80 120 Gate Charge Qg (nc) 5 2SJ553(L),2SJ553(S) Reverse Drain Current vs. Source to Drain Voltage Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) –50 100 I AP = –30 A V DD = –25 V duty < 0.1 % Rg > 50 Ω Reverse Drain Current I DR (A) –40 –5 V –30 –10 V –20 V GS = 0 80 60 40 –10 20 0 25 0 –0.4 –0.8 –1.2 –1.6 –2.0 50 75 100 125 150 Source to Drain Voltage V SD.


2SJ553 2SJ553L 2SJ553S


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)