Document
2SJ553(L),2SJ553(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-650B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.028 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.
Outline
LDPAK
4 D 1 G 1 4
2
3
2
3
1. Gate 2. Drain 3. Source 4. Drain
S
2SJ553(L),2SJ553(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)
Note1
Ratings –60 ±20 –30 –120 –30
Unit V V A A A A mJ W °C °C
Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP
Note3 Note3 Note2
–30 77 75 150 –55 to +150
EAR
Pch Tch
Tstg
1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C 3. Value at Tch = 25° C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
Item Symbol Min –60 ±20 — — –1.0 — — 15 — — — — — — — — — Typ — — — — — 0.028 0.038 25 2500 1300 300 25 150 350 220 –0.95 100 Max — — –10 ±10 –2.0 0.037 0.055 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = –30A, VGS = 0 I F = –30A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = –10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = –60 V, VGS = 0 VGS = ±16V, VDS = 0 I D = –1mA, VDS = –10V I D = –15A, VGS = –10V Note4 I D = –15A, VGS = –4V Note4 I D = –15A, VDS = –10V Note4 VDS = –10V VGS = 0 f = 1MHz VGS = –10V, I D = –15A RL = 2Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time I DSS I GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf
Body–drain diode forward voltage VDF Body–drain diode reverse recovery time Note: 4. Pulse test t rr
2
2SJ553(L),2SJ553(S)
Main Characteristics
Power vs. Temperature Derating 80
–1000
Maximum Safe Operation Area
Pch (W)
I D (A)
10
–100
PW
60
µs
10
0
1
= 10 ms
Channel Dissipation
Drain Current
40
–10
DC
m
µs
s
20
–1
(1 er sh ot) (T atio Operation in c= n 25 this area is °C limited by R DS(on) )
Op
–0.1
Ta = 25 °C
0
50
100
150 Tc (°C)
200
Case Temperature
–0.1 –1 –10 –100 Drain to Source Voltage V DS (V)
Typical Output Characteristics –50 –8 V –3.5 V Pulse Test –50
Typical Transfer Characteristics V DS = –10 V
I D (A)
–5 V –30 –4 V VGS = –10 V –20
I D (A) Drain Current
–40
–40
–30
Drain Current
–3 V
–20 Tc = 75 °C 25 °C -25 °C 0 –1 –2 –3 Gate to Source Voltage –4 –5 V GS (V)
–10
–2.5 V –2 V
–10
0
–2 –4 –6 Drain to Source Voltage
–8 –10 V DS (V)
3
2SJ553(L),2SJ553(S)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source On State Resistance R DS(on) ( Ω )
–5
Drain to Source Saturation Voltage V DS(on) (V)
Static Drain to Source on State Resistance vs. Drain Current 1 0.5 0.2 0.1 VGS = –4 V –10 V
–4
–3
–2 I D = –50 A –1 –20 A –10 A 0 –4 –8 –12 Gate to Source Voltage –16 –20 V GS (V)
0.05
0.02 0.01
–1 –3
–10
–30
–100 –300
–1000
Drain Current
I D (A)
Static Drain to Source on State Resistance R DS(on) ( Ω)
Forward Transfer Admittance |y fs | (S)
Static Drain to Source on State Resistance vs. Temperature 0.1
100 30
Forward Transfer Admittance vs. Drain Current
0.08 I D = –50 A V GS = –4 V 0.04 –10 A
–20 A –50 A –10,–20A
Tc = –25 °C 10 3 1 0.3 V DS = –10 V –100 25 °C
0.06
75 °C
0.02 0 –40
V GS = –10 V
0 40 80 120 160 Case Temperature Tc (°C)
0.1 –0.1 –0.3 –1 –3 –10 –30 Drain Current I D (A)
4
2SJ553(L),2SJ553(S)
Body–Drain Diode Reverse Recovery Time 1000 10000 3000 1000 Coss 300 100 30 10 0 –10 –20 –30 –40 –50 Drain to Source Voltage V DS (V) Crss Ciss VGS = 0 f = 1 MHz Typical Capacitance vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
200 100 50
20 10 0.1
di / dt = 50 A / µs VGS = 0, Ta = 25 °C 10 100 30 3 1 0.3 Reverse Drain Current I DR (A)
Capacitance C (pF)
500
Dynamic Input Characteristics
Switching Characteristics
V DS (V)
–20
Drain to Source Voltage
I D = –30 A
–4
Switching Time t (ns)
V DD = –10 V –25 V –50 V
V DS
V GS (V)
0
0
1000 500 200 100 50 t d(on) 20 10 –0.1 –0.3 V GS = –10 V, V DD = –30 V PW = 5 µs, duty < =1% –3 –1 –10 –30 Drain Current I D (A) –100 t d(off) tf
–40 V GS –60 V DD = –10 V –25 V –50 V
–8
Gate to Source Voltage
tr
–12
–80
–16 –20 200
–100 0
160 40 80 120 Gate Charge Qg (nc)
5
2SJ553(L),2SJ553(S)
Reverse Drain Current vs. Source to Drain Voltage Maximum Avalanche Energy vs. Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
–50
100 I AP = –30 A V DD = –25 V duty < 0.1 % Rg > 50 Ω
Reverse Drain Current I DR (A)
–40 –5 V –30 –10 V –20 V GS = 0
80
60
40
–10
20 0 25
0
–0.4
–0.8
–1.2
–1.6
–2.0
50
75
100
125
150
Source to Drain Voltage
V SD.