2SJ548
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-639A (Z) 2nd. Edition Jun 1998 Features
Low on-resistance R DS(on) = 0.075Ω typ. Low drive current. 4V gate drive devices. High speed switching.
Outline
TO–220FM
D
G
1 2 S
1. Gate 2. Drain 3. Source
3
2SJ548
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gat...
