2SJ546
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-638A (Z) 2nd. Edition Jun 1998 Features
Low on-resistance R DS(on) = 0.075 Ω typ. Low drive current. 4V gate drive devices. High speed switching.
Outline
TO–220CFM
D
G 1 2
3
S
1. Gate 2. Drain 3. Source
2SJ546
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage...
