2SJ544
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-648A (Z) 2nd. Edition Jun 1998 Features
Low on-resistance R DS(on) = 0.028 Ω typ. Low drive current. 4V gate drive devices. High speed switching.
Outline
TO–220AB
D
G
1 2 S 3
1. Gate 2. Drain (Flange) 3. Source
2SJ544
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source ...
